发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To facilitate processes, and to improve a current control function from the outside by fitting a third terminal controlling injection currents flowing between first and second terminals by a depletion layer formed by applying a bias. CONSTITUTION:Currents are flowed between an electrode 39 and an electrode 40, and light is emitted in an active layer 33 in the vicinity of a diffusion layer 36. Since AlGaAs layers as optical confinement layers 32, 34 are formed in high resistance layers at that time, currents concentrate to the active layer 33, and the extension of currents is prevented by applying negative voltage at a reverse bias to a P<+> diffusion layer 37 through an electrode 41, thus concentrating currents to the active layer 33, then improving the efficiency of currents. A depletion layer is shaped easily because of high P<+> concentration in the diffusion layer 37. When the concentration of P<+> is brought to approximately 1X10<18>cm<-3>, the depletion layer in approximately several thousand Angstrom is formed in the active layer 33 and the optical confinement layer 34, thus controlling a laser output.
申请公布号 JPS61159784(A) 申请公布日期 1986.07.19
申请号 JP19850000423 申请日期 1985.01.08
申请人 CANON INC 发明人 MIYAZAWA SEIICHI;NOJIRI HIDEAKI;HARA TOSHITAMI;SHIMIZU AKIRA;SEKIGUCHI YOSHINOBU;HAKAMATA ISAO
分类号 H01S5/00;H01S5/026;H01S5/042;H01S5/20 主分类号 H01S5/00
代理机构 代理人
主权项
地址