发明名称 SENSE AMPLIFIER DRIVE CIRCUIT OF DYNAMIC MEMORY
摘要 PURPOSE:To reduce power consumption attened with sense operation and to speed up the sense operation by adopting the constitution that a sense amplifier activating signal transited from an intermediate potential into a common potential or a power supply potential is outputted while a sense part signal is received. CONSTITUTION:A bit line precharge signal phiPC is activated in synchronizing with an RAS precharge period. An intermediate potential precharge circuit 1 is formed with an intermediate potential precharge transistor (TR) N3 whose gate is drive by the precharge signal phiPC and N-channel MOSTRs N4, N5 for intermediate potential application applying an intermediate potential to bit lines BL, BL during the RAS precharge period to keep the bit line pair at the intermediate potential. A sense amplifier drive circuit 2 receiving a sense start signal during the RAS active period and outputting sense amplifier activating signals phiSEN, phiSEP outputs the phiSEN signal transited from the intermediate potential to a VSS level and the phiSEP signal transited from the intermediate potential to a VCC power supply level with a delay from the approx.=SEN signal.
申请公布号 JPS61158094(A) 申请公布日期 1986.07.17
申请号 JP19840276123 申请日期 1984.12.28
申请人 TOSHIBA CORP 发明人 SAITO SHOZO
分类号 G11C11/409;G11C11/34 主分类号 G11C11/409
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