| 摘要 |
PURPOSE:To increase the diffusion of gas by slowing down the velocity of flow of gas as well as to uniformly splinkle the gas on a semiconductor wafer by a method wherein gas jetting hole with which etching gas is flown against the whole surface of the semiconductor wafer, is provided on an upper electrode. CONSTITUTION:A gas jetting hole 2, with which etching gas is flown on the whole surface of a semiconductor wafer 4, is provided on the upper electrode 1. For example, the gas jetting hole 2 having the diameter almost same at that of the semiconductor wafer 4 set on the lower electrode table 5 is provided on the lower surface of the upper electrode 1. As a result, the velocity of the blowing-out gas is made slower, the gas is spread over a wide range of area uniformly, and the etching gas is diffused uniformly over a wide area in a etching chamber, thereby enabling to perform an etching on the semiconductor wafer uniformly. |
