| 摘要 |
PURPOSE:To enable to obtain a good connecting state even when a connection between the different wiring layers in the site on one side and a connection between the different wiring layers in the other site are simultaneously formed by a method wherein a connection of the first wiring layer and the second wiring layer is performed through a conductive layer, which is provided under the connecting hole parts of both wiring layers. CONSTITUTION:A first wiring layer 12 is formed in the site on one sidfe on a semiconductor substrate 11 through an insulating film, and at the same time, a conductive layer 13 is formed in the other site through an insulating film and a first interlayer insulating film 14 is formed excluding a part of the insulating layer 13, whereon a second wiring layer is to be formed. Then, after the second wiring layer 15 is formed on the conductive layer 13, a second interlayer insulating film 16 is formed and resist layers 17 are formed on the interlayer insulating film 16 excluding parts, wherein connecting hole parts are to be formed. Then, when an dry etching is performed, parts of the first interlayer insulating film 14 and the second interlayer insulating film 16, which are located on the first wiring layer 12 in the site on one side, are etched and are removed, and a connecting hole part 18a is formed, while not only a part of the second interlayer insulating film 16 in the other site but also a part of the second wiring layer 15 just under an opening part 19 perforated in the resist layer 17 are removed and a connecting hole part 18b is formed. Then, each third wiring layer 20 is simultaneously formed in both sides. |
