| 摘要 |
PURPOSE:To obtain the high conduction hole concentration and the good crystalline state of a compound semiconductor device even though the amount of implantation of Zn is excessively increased by a method wherein a P-type AlxGa1-xAs (0<x<1) layer, wherein Ge is doped in addition to Zn, is formed. CONSTITUTION:An N-type Al0.7Ga0.3As layer 3, wherein Te is implanted, an impurity-undoped N-type Al0.2Ga0.8As layer 4, a P-type AlxGa1-xAs (0<x<1) layer 5, wherein Ge is implanted in addition to Zn as an impurity, and an N-type GaAs layer 6, wherein Te is implanted, are laminatedly formed on an N-type GaAs substrate 2. Moreover, a striped P-type region 7, wherein Zn is diffused, is provided in the layer 6, thereby forming a compound semiconductor device 1. By implanting Ga in the layer 5 in addition to Zn in such a way, the conduction hole concentration of the layer 5 is remarkably augmented, and moreover, the crystalline state of the P-type layer 5 is improved. Accordingly, when this device 1 is utilized for a semiconductor laser, the luminous efficiency of the laser is remarkably augmented. |
