| 摘要 |
<p>PURPOSE:To obtain a semiconductor device which has an electrically excellent chip structure free from imperfect contact or peeling by fixing a semiconductor device chip to a disposition platform by the use of soldering material via the first and second metallic layers composing of prescribed kinds of material. CONSTITUTION:A semiconductor device chip 1 is fabricated by adhering three layers successively on the back side of a wafer: a first layer 2 of more than 2,000Angstrom thickness, a second layer 3 of less than 1,500Angstrom thickness and a layer 4 of Sn-Cu alloy. The chip 1 thus treated is fixed to a heated disposition plat form 5 by depressing the alloy layer 4 onto the platform. The metallic layer 2 is composed of one of Ti, Cr, Zr, Nb and V, or an alloy containing it as the main component, and prevents the diffusion of Cu component of the solder ing material into the semiconductor device chip by thickening the layer 2. The metal layer 3 is composed of any one of Ni and Co, or an alloy containing it as the main component, and mitigates the internal stress arising from a pos sible thermal stress because its expansion coefficient is between those of the layers 2, 3.</p> |
