| 摘要 |
PURPOSE:To enhance the reliability under operating conditions particularly of high temperature and high output with a large strength to reflection noise, by a method wherein the titled device has the reflectance of an end surface of higher reflectance made larger than that of a cleavage surface, and the reflectance of an end surface of lower reflectance made 10% or more. CONSTITUTION:A diffraction grating 2 is formed on an N-InP substrate 1, and an N-InGaAsP guide layer 3 of 1.3mum composition, a non-doped InGaAsP active layer 4 of 1.55mum composition, and a P-InP clad layer 5 are successively laminated thereon. This device is made hetero-structural by the process of burial growth, and one end surface is provided with an SiN film 7 and an Au high-reflection coating film 8. The reflectance at this time is 97%, and the reflectance in the emission end surface 6 is 31%; then, the characteristic of particularly high-temperature action largely improves by the difficulty of being affected by reflection noise. |
