| 摘要 |
PURPOSE:To obtain low threshold current in an SCH structure and to obtain a semiconductor laser element having excellent temperature characteristics, by using a semiconductor super lattice for light confining layers. CONSTITUTION:A P-type doped, semiconductor super-lattice light confining layer 24 comprises AlAs and GaAs. Two very thin single crystal semiconductor layers comprising AlAs and GaAs in an Angstrom order are alternately laminated in said layer 24. An N-type doped, semiconductor super-lattice light confining layer 26 comprises AlAs and GaAs. The interfaces between an active layer 25 and the light confining layer 24 and between the layer 25 and the layer 26 have heterogeneous interfaces. The light confinement is achieved by the conventional method. Meanwhile, in carrier confinement, the confinement can be performed, with sufficiently large energy difference being provided in comparison with the conventional method. Thus, a semiconductor laser characterized by small leak current, low threshold current, excellent temperature characteristics and small spread of a beam can be obtained. |
