| 摘要 |
PURPOSE:To reduce the number of mask aligning processes and to make the processes suitable for forming a high density element, by omitting the reoxidation of a gate part. CONSTITUTION:On the entire surface of a p-Si substrate 21, a PSG layer 22 and siloxane resist 23 are deposited. then, electron beams are projected on a part other than source and drain regions. The device is developed, and the PSG layer 22 is exposed. By inverted etching, the PSG layer 22 beneath the siloxane resist 23 is removed. Then, the device is heated, and the siloxane resist 23 is converted into an SiO2 layer 23A. P is selectively diffused into the substrate 21 through the PSG layer 22, and n<+> type source and drain regions 24 and 25 are formed. The PSG layer is selectively etched and removed by the speed difference in wet etching. By using resist 26, the SiO2 layer 23A is etched and made thin, and a gate oxide film is obtained. An aluminum layer 27 is deposited on the entire surface of the substrate. The layer is patterned, and an Al wiring is formed. Thus a gate electrode G, a source electrode S and a drain electrode D are obtained. |
