| 摘要 |
PURPOSE:To eliminate the leakage of visual rays to a photoelectric conversion section approximately, and to improve the resolution of a photosensor by a method wherein an aluminum film is grown on the surface of a CCd section with the exception of an indium bump section, an aluminum surface is anodized, a passivation film is removed while using an anodized film as a mask and the indium bump section is formed. CONSTITUTION:A channel stop is constituted by a charge-injection section n<+> type diffusion 15 and a p<+> type diffusion region 16. An SiO2 film 17 is shaped as a passivation film, and a resist film 18 is formed to an indium bump section. An aluminum film is evaporated on the whole surface,and the resist film is removed, thus obtaining a light-shielding film 19. The surface of the light- shielding film 19 is anodized to shape an insulating layer 20 consisting of thin Al2O3. One pat of SiO2 17 is removed while using the anodized film 20 as a mask, and a contact section for an indium bump is formed. A thick resist film is applied on the whole surface, the resist on the bump contact section is removed, and indium 9 is evaporarted. Said CCD section and an InSb substrate with a photoelectric conversion section are coupled. |
