| 发明名称 |
METHOD OF PRODUCING SINGLE CRYSTAL FILM |
| 摘要 |
An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed. |
| 申请公布号 |
DE3363846(D1) |
申请公布日期 |
1986.07.10 |
| 申请号 |
DE19833363846 |
申请日期 |
1983.01.27 |
| 申请人 |
HITACHI, LTD. |
发明人 |
TAMURA, MASAO;OHKURA, MAKOTO;MIYAO, MASANOBU;NATSUAKI, NOBUYOSHI;YOSHIHIRO, NAOTSUGU;TOKUYAMA, TAKASHI;ISHIHARA, HIROSHI |
| 分类号 |
H01L21/20;C30B1/02;C30B1/08;H01L21/31;(IPC1-7):C30B1/02 |
主分类号 |
H01L21/20 |
| 代理机构 |
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