| 摘要 |
PURPOSE:To make it feasible to substantially laminate a metal or metallic compound on a gate insulating film on an extremely thin semiconductor film coming into close contact therewith by a method wherein, within an insulating gate type field effect semiconductor device, a semiconductor film and a conductor thereon are formed in the same reactor without exposing them to atmosphere. CONSTITUTION:A P-type channel region 10 and a gate electrode 6 made of metallic tungsten are formed on a substrate 1. A silicon oxide film 3 300Angstrom thick is formed and then a semiconductor film 4 30-300Angstrom thick is formed by photochemical reactor on the film 3. Later metallic tungsten is formed by plasma CVD process by vacuumizing and leading tungsten fluoride and hydrogen to a reactor without exposing the tungsten to atmosphere. After forming a conductor 5 for gate electrode, a gate electrode 6 is formed by photolithography. Within said processes, the gate electrode 6 and a lead extending therefrom are not subject to any exfoliation phenomenon even if the pattern width thereof is extremely narrow e.g. 1mum. |
