MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To make the resist process needless by effecting the selective etching of the polycrystalline or amorphous thin film by utilizing a difference in etching rate by recrystallizing the desired part of the pattern of said film by laser annealing. CONSTITUTION:A polycrystalline or amorphous thin film 1 is formed on a substrate 3 and a part of this is recrystallized by laser annealing so as to form a minute pattern part 2 whose etching rate is smaller than that of the part not irradiated with a laser. Accordingly when this wafer is etched by use of RIE and etc., the part except the pattern part 2 can be etched selectively without using a particular mask such as of a resist.