| 摘要 |
PURPOSE:To improve the effect of current concentration by applying a protective layer onto the surface of a semiconductor laser, forming a mask in a predetermined region, implanting ions through the protective layer, shaping a current constriction region to sections except the mask, removing the mask and forming an electrode to a removing section when the electrode is shaped to the laser. CONSTITUTION:An N-type AlGaAs first clad layer 2, a GaAs active layer 3, a P-type AlGaAs second clad layer 4, and a P-type cap layer 5 are laminated onto an N-type GaAs substrate 1 and grown in an epitaxial manner, and a protective layer 10 consisting of SiN, SiO2, etc., which do not damage these layers and have not high stopping power even to element ions having large atomicity, is applied when ions are implanted onto the layer 5. Masks 9 com posed of a photo-resist are formed into predetermined regions on the layer 10, and B<+> ions are implanted to sections where there are no mask 9 through the layer 10 to shape current constriction regions 6 intruding to the layer 2. The masks 9 and the layer 10 are removed through etching, electrode windows are bored onto the layer 5 narrowed by the regions 6, and Au electrodes 7 are applied to the windows and an ohmic electrode 8 onto the back of the substrate 1 respectively.
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