| 摘要 |
1. Semiconductor component with the features : a) a semiconductor substrate (1) contains a first zone (2) of the first conductor type, b) a second zone (3) of the second conductor type lies over the first zone (2), c) the second zone (3) is provided with an opening (5), d) the first zone (2) has a depression (4) below the opening (5), e) the first and the second zone are connected electrically to one another via a conductive layer (13), f) the conductive layer (13) makes contact with the first zone (2) in the depression (4) and with the second zone (3) at the wall (8) of the opening (5), g) the depression (4) has a level floor (6) parallel to the surface of the semiconductor substrate (6), h) the second zone (3) has a doping concentration of => 10** 19 cm** -3, characterized by the features : i) the first zone (2) has a maximum concentration of doping substances in the vicinity of and perpendicular to the substrate surface, j) the floor (6) of the depression (4) lies at least approximately in the deepest part of the maximum concentration. |
