| 摘要 |
PURPOSE:X-rays are irradiated through a slit to the crystal to detect refracted rays and shield non-scattering rays, so that the conditions for crystal growth are monitored whereby a single crystal of high purity and uniformity is obtained. CONSTITUTION:The incidence X-ray 1 from its source is passed through a rectangular slit 2' which has dimensions satisfying f>2g and f>=3mm, g<=3mm, when the horizontal length is represented by f and the vertical length, g to the single crystal 5 which is grown in a furnace 4, e.g., in a crucible 10 by the CZ method and the refracted X-ray 61 is detected by the detector 7. The growth conditions are appropriately adjusted according to the results of the detected refracted X-rays. The X-rays 8 which has not been refracted by the crystal are shielded with a plate 9 between the furnace 4 and the detector 7 so that the rays do enter the detector. Further, the change in crystal diameter (e.g., a b), e.g., caused by facet is also detected by detecting refracted X-ray 62 with the detector 7.
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