| 摘要 |
PURPOSE:To obtain a highly reliable photodetector whose manufacturing processes are simple and which can meet a wavelength to be measured and other required performances, by forming a charge injecting part for a first transistor by the same process for the base region of a second transistor, and forming a photoelectric conversion part by another process. CONSTITUTION:In a N-type substrate 1, a photoelectric conversion part 12 of a P-type diffused layer and a charge injecting part 13 of a P-type diffused layer are formed. A part corresponding to the diffused layer of a conventional semiconductor light detector is divided into the photoelectric conversion part 12 (a photodiode part) and the charge injecting part 13 (the charge injecting region of the switching part of the P-type diffused layer). The parts are formed by independent processes. Or a charge injecting part 16 is formed by the same process at the depth and concentration, which are suitable for a base 5 of an N-P-N transistor. A photoelectric conversion part 15 is formed at the shallower depth and higher concentration than the charge injecting part 16 and the base 5 of the N-P-N transistor. Thus the diffusing depth and the impurity concentration of the photoelectric conversion part and the charge injecting part can be freely set. Therefore, short-wavelength sensitivity can be increased. The detecting limit of low illuminance can be also improved. |
