发明名称 DISPOSITIF A SEMI-CONDUCTEURS ET SON PROCEDE DE FABRICATION
摘要 A semiconductor device in which a silicon pellet is mounted on a ceramic substrate by means of a glass material of low melting point. To prevent the silicon pellet from being destroyed under thermal stress, the pellet is bonded to the glass material of low melting point through interposition of an adhesion reinforcing film such as an aluminium film capable of exhibiting a good wettability and a great bonding strength.
申请公布号 FR2491259(B1) 申请公布日期 1986.07.04
申请号 FR19810018497 申请日期 1981.09.30
申请人 HITACHI LTD 发明人 HIDEHARU YAMAMOTO ET HIROSHI TSUNENO;TSUNENO HIROSHI
分类号 H01L23/12;H01L21/52;H01L21/58;H01L23/13;(IPC1-7):H01L21/58;H01L23/32 主分类号 H01L23/12
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