| 摘要 |
PURPOSE:To connect a second wiring layer, second metal film and first metal film with a small contact resistance and good reproducibility, by connecting the first metal of a first wiring layer and the second wiring layer with the second metal film of the first wiring layer put therebetween. CONSTITUTION:After an insulator layer 2 made of SiO2 is formed on a semiconductor substrate 1, a first metal film 3a of aluminum Al and a second metal film 3b of molybdenum Mo are formed sequentially with sputtering in order to constitute a first wiring layer 3. Next, the first metal film of Al is etched so as to form a desired first wiring film 3. After an interlayer insulator film 4 is formed over the entire face of the semiconductor substrate including the first wiring film 3 with vapor growth, through holes 4a are bored above the first wiring film 3. Thereafter, the surface of the second metal film 3b in the through holes 4a is etched slightly by several tens Angstrom in CF4 plasma to remove a barrier film and then Al constituting the second wiring film 5 is formed with sputtering. |
