ELECTROSTATIC BINARY SWITCHING AND MEMORY DEVICES

摘要

Arrays of electrostatic elements arranged in columns and rows are used for switching purposes and for memory devices. Electrostatically attracted members, for each element, when actuated, complete a capacitance device to render that element capable of retaining a charge. Whether or not the element is a capacitance device is sensed by a high frequency signal. Permanent memories can be made by substitution of a pattern of conductor areas for the attractable members. The attractable members, when attracted, form a capacitance switching device or matrix of switches.