发明名称 |
METHOD OF MANUFACTURE OF A PIN AMORPHOUS SILICON SEMI-CONDUCTOR DEVICE |
摘要 |
A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure. |
申请公布号 |
DE3174747(D1) |
申请公布日期 |
1986.07.03 |
申请号 |
DE19813174747 |
申请日期 |
1981.12.23 |
申请人 |
EXXON RESEARCH AND ENGINEERING COMPANY |
发明人 |
FRIEDMAN, ROBERT ALAN;MOUSTAKAS, THEODORE DEMETRI |
分类号 |
H01L31/04;H01L31/0392;H01L31/075;H01L31/20;(IPC1-7):H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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