| 摘要 |
PURPOSE:To inhibit the variation in element parameters due to irradiation with radiation by a method wherein the titled device is so constructed as to supply the power source from the drain common connection point of the first and second MOS transistors to the IC formed on the same substrate. CONSTITUTION:The gate and the source of the first MOS transistor (TR) 11 are connected to each other and then connected to a terminal 12 to which the first power source VDD is supplied. The drain of the second N-channel MOSTR 13 of enhancement type is connected in common to the drain of the MOSTR11, and the gate and the source of this MOSTR13 are connected to each other and then connected to a ground point VSS. A resistor 14 is inserted between the source and the drain of the MOSTR11. Thus, this device is so formed as to supply the power source from the drain common connection point of the MOSTR's 11 and 13 to the MOSTR's 11, 13 and the resistor 14, and to the IC formed on the same substrate. |
