发明名称 METHOD OF DRIVING SEMICONDUCTOR MEMORY
摘要 PURPOSE:To enlarge operation margin of a sense amplifier simply and accurately at high reproducibility by connecting all dummy cells to corresponding bit lines by dummy reset lines and holding balance level on the bit lines. CONSTITUTION:A minute difference signal is read out on bit lines B0, B1 from a memory cell MCO and a dummy cell DCO, and lines B0, B1 are made to VD, GND level through a sense amplifier SA. After this driving, a dummy reset line P1 is made high level, and connected to an unselected line B0 and dummy capacity (nodal point ND1) in a cell DC1 is precharged to the same level with the line B0. Then, after inactivating the SA, a bit line balance signal line P0 is made high level, and a pair of lines B0 and B1 are balanced. When the balance level is made VP0, dummy capacity of cells DC0, DC1 are connected respectively to lines B1, B0, and the level VP0 becomes precharge level of nodal point ND0, ND1.
申请公布号 JPS61144793(A) 申请公布日期 1986.07.02
申请号 JP19840266760 申请日期 1984.12.18
申请人 NEC CORP 发明人 TAKESHIMA TOSHIO
分类号 G11C11/401;G11C11/34;G11C11/409 主分类号 G11C11/401
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