| 发明名称 |
AMORPHOUS SILICON SEMICONDUCTORS |
| 摘要 |
A film of hydrogenated amorphous silicon is made by thermally decomposing a monosilane at elevated temperature in the presence of a substrate and depositing a layer of amorphous silicon which contains hydrogen on the substrate. |
| 申请公布号 |
GB8613076(D0) |
申请公布日期 |
1986.07.02 |
| 申请号 |
GB19860013076 |
申请日期 |
1986.05.29 |
| 申请人 |
BRITISH PETROLEUM CO PLC;PURNELL, J H |
发明人 |
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| 分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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