| 摘要 |
PURPOSE:To shield an external effect, such as an electric field, beams or the like by coating an element and a wiring with a metallic layer and holding the metallic layer at predetermined potential. CONSTITUTION:The titled integrated circuit consists of a semiconductor substrate 1, a metallic layer 2 for a wiring, a wiring section 3 connected at prescribed potential in the metallic layer 2 for the wiring, and insulating layer 4 formed onto the metallic layer 2 for the wiring, a metallic layer 5 shaped onto the insulating layer 4 and a through-hole 6 connecting the wiring section 3 and the metallic layer 5. An element and the wiring in the semiconductor integrated circuit are shielded from the outside by the metallic layer 5 brought to fixed potential at that time, thus being subject to no adverse effect by an electric field or beams on the outside. The wiring may be connected through other means such as a bonding from the outside besides the use of the through- hole 6 in order to bring the metallic layer 5 at fixed potential. |
