| 摘要 |
PURPOSE:To fabricate the mixed crystal epitaxial growth wafer of a small warp efficiently by removing the crystal growth layer (including the outermost layer) formed on the P or N type crystal growth layer as an outer layer after continuing the epitaxial growth while contacting a melt on the outer P or N type crystal growth layer among the crystal growth layers. CONSTITUTION:A P-type GaAs substrate 1, a P-type GaAlAs crystal layer 2, an N-type GaAlAs crystal layer 3, an N-type depletion GaAlAs crystal layer 3', and an N-type GaAs crystal layer 4 are arranged and the layers 3' and 4 are surplus crystal layers which are to be removed in the later step. For the epitaxial growth, the melt materials for P-type GaAlAs crystal layer and N-type GaAlAs crystal layer are charged in solution reservoirs of a boat and a P-type GaAs substrate is put on a substrate supporting member of a slide. While circulating H2 in the device, the temperature is increased and held for the constant time according to the predetermined temperature programs and cooling starts. A P-type GaAlAs crystal layer 2 is epitaxially grown on a P-type GaAs substrate 1 and further an N-type GaAlAs crystal layer 3 is epitaxially grown by sliding the boat. |
