| 摘要 |
PURPOSE:To contrive to improve moisture resistance by covering the semiconductor element, connector wires, and wire bonding parts, by a method wherein a dam for stopping flows of Si gel is provided, and Si gel is potted by filling gaps among leads of the lead frame. CONSTITUTION:When the element material is put in a molding die consisting of the upper die 11 and the lower die 12 and injected, a ring-shaped dam 7 having a suitable height and width is formed and at the same time fills gaps among leads 5. A semiconductor element 1 is fixed on the tab 4 of a lead frame 3 and its electrodes are electrically and physically connected to the tips of the inner leads 5 with connector wires 2. Then, the forming material of an Si series gel 6 is potted to the area surrounded by the dam 7 for stopping gel flows. Thus, the semiconductor element 1, connector wires 2, bonding parts of these wires 2 with the element 1, and bonding parts of the wires 2 with the inner lead 5 tips are covered with the Si series gel 6 formed by curing the gel forming material. |
