| 摘要 |
<p>PURPOSE:To reduce an effect by floating capacitance between a gate electrode and a drain electrode connected to a picture element electrode by using a thin- film transistor as a switching element for an active matrix type liquid crystal display device, etc. CONSTITUTION:The total of the number of a gate electrode G, a gate insulating film 3 brought into contact with the gate electrode, a semiconductor thin-film 4 brought into contact with an insulating film on the side opposite to the gate electrode and a source electrode S and drain electrodes D1, D2 brought into contact with the semiconductor thin-film is constituted by at least three terminals. The constitution of the source electrode S and the drain electrodes D1, D2 consists of one source electrode and two drain electrodes on three terminals, the first drain electrode D1 in the two drain electrodes D1, D2 is positioned closely to the source electrode S, and the second drain electrode D2 is arranged far from the source electrode S. Input signals are transmitted over the source electrode S, the second drain electrode D2 is connected to the ground, and output signals are extracted from the first drain electrode D1 positioned between the source electrode S and the second drain electrode D2.</p> |
