| 摘要 |
PURPOSE:To obtain excellent oscillating characteristic by forming a double hetero-structure that is contacted at the upper and lower surfaces with a substance having small refractive index and has an active region contacted at both sides with a space, thereby effectively enclosing a light to an active region. CONSTITUTION:A reverse mesa type groove 22 is formed in parallel by photolighography on an InP substrate 21, and an InGaAsP layer 23 is formed by an MBE method. The layer 23 is disconnected and has a grown portion 29. A P type In layer 24, an N type InP layer 25 and a P type InP layer 26 are grown. A P type In layer 27 is grown by an LPE. Zn is diffused selectively from the surface of the groove 22 by photolithography to from the layer 25 to P type to form a P type stripe 28. Electrodes 8, 9 are formed on both sides of a wafer, and a semiconductor laser is obtained by cleavage. Since an active region 2 is contacted at the upper and lower sides with P type clad 2 and N type clad 3 having small refractive indexes and both sides are contacted with the space 6, a light enclosing effect is effectively performed.
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