| 摘要 |
PURPOSE:To obtain a solid-state image pickup device with structure which eliminates a contradiction between a dynamic range and sensitivity fundamentally by providing a transfer gate and a vertical MOS shift register which transfer signal charges transferred to a vertical CCD vertically; and a signal storage part. CONSTITUTION:The vertical CCD uses CCD structure employing, for example, ion implantation. The signal of a photodiode is transferred to vertical CCDs with pulses generated by a vertical shift register 6 when vertical CCDs are all in a high level state. Then, transfer pulses for vertical transfer generated by a vertical register 11 are inverted by an inverter 16 into off pulses, which are applied to the vertical CCDs successively to transfer signals charged in the vertical CCDs toward the signal storage part 7 facing down in a figure as if they were pushed out. A voltage is applied between terminals 14 and 15 to apply the voltage to gates of the vertical CCDs upwardly, further improving the efficiency of the vertical transfer.
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