| 摘要 |
PURPOSE:To improve the reliability with high efficiency by removing a quantum effect suppressing action caused by the fluctuation of a remarkably potential in a multicomponent mixed crystal semiconductor. CONSTITUTION:When a superlattice multiple quantum well MQW laser is formed with a single molecule layer as a constituent unit, clad layer 22, 24 from (Al0.6 Ga0.4)0.5In0.5P, a well layer 31 forms (Al0.17Ga0.83)0.5In0.5P, and a barrier layer 32 form (Al0.4Ga0.5)0.5In0.5 in a mixed crystal. Since Al, Ga and In atoms are completely ordered and arranged, no scatter base on random order and the fluctuations of quantum well potential are eliminated, but an ideal well MQW is formed to obtain a semiconductor device having excellent reliability with high efficiency. |
