| 摘要 |
PURPOSE:To prevent short circuits in a photoconductive layer due to erosion during an etching process accomplished to divide the photoconductive layer into picture elements by a method wherein a first transparent electrode layer is formed on an photosensitive layer and a second transparent electrode layer is formed with the intermediary of an interlayer insulating film. CONSTITUTION:A scanning circuit substrate 100 is provided with a MOS field effect transistor constituted of a source 1, drain 2 and gate 3. An electrode 6, insulating layer 7 and groundwork electride 8 are added. An N type and P<+> type amorphous silicon films 9, 10 are formed, which is followed by the provision of a protecting first transparent electrode layer 11 composed of ITO, SnO3, In2O3, CdO2, CrSix, or the like, which is further followed by the formation of a photoconductive film section 200. Etching is accomplished for the formation of an inter-element dividing groove 13 is formed, and PSG, polyimide, or the like is attached to serve as an inter-layer insulating film 14. Selective etching is accomplished for the provision of an opening, whereinto a second transparent electrode layer 16 is attached, whereon a metal-made optical shield layer 17 is formed in an inter-element dividing region composed materially similar to the transparent electrode layer 11. The transparent electrode layer protects a P<+> type amorphous silicon film that is a photosensitive layer from erosion. |
