发明名称 |
Etching a layer over a semiconductor |
摘要 |
A new phenomenon in integrated circuit etch processing is presented, explained and utilized to permit better removal of layers overlying integrated circuit structures, and if desired, the formation of conductive layers on such structures by a less complicated and lower temperature process than has been possible by conventional techniques.
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申请公布号 |
US4596627(A) |
申请公布日期 |
1986.06.24 |
申请号 |
US19850745036 |
申请日期 |
1985.06.13 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
HACKLEMAN, DAVID E.;NIELSEN, JR., RALPH H.;LEBAN, MARZIO A. |
分类号 |
H01L21/311;(IPC1-7):B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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