| 摘要 |
PURPOSE:To control a bypass current value at an optimum value by forming two parallel grooves demarcating striped regions and a plurality of grooves, which are connected to the grooves and do not run parallel with the grooves, filling these grooves of two kinds with a single crystal of the same kind as a substrate and properly selecting the geometrical shapes of the latter grooves. CONSTITUTION:In a semiconductor light-emitting device, a laser light-emitting striped section 10, grooves 18 demarcating the stripe and second grooves 19 continuously formed to these grooves are shaped. The grooves 19 are buried with a P-InP layer 16 and an N-InP layer 17 in the same manner as the grooves 18 for demarcating the stripe, and a P-InP layer 14 and a P-In1-xGaxAs1-yPy layer 15 are formed onto the layer 17. Bypass currents do not flow through sections, to which the grooves 19 are shaped, by a laser, but bypass currents flow through sections in which there is no groove 19. The bypass currents are proportional to size shown in (c), thus setting bypass currents at an optimum value by properly selecting the ratio of the width b of the grooves to width c among the grooves or the ratio of each total value of b and c, then also improving yield largely.
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