| 摘要 |
PURPOSE:To contrive the improvement of an oxidation resistance characteristic by etching until an underground oxide film is exposed after the etching is once stopped at nearly the interface of a high melting point metal silicide film and the first polycrystalline silicon film and the second polycrystalline silicon film is deposited on all the surface. CONSTITUTION:A silicon thermal oxide film 12 is formed on a silicon substrate 11 and the first polycrystalline silicon film 13 and a high melting point metal silicide film 14 are deposited. A resist 15 is coated, the high melting point metal silicide film 14 is etched nearly to the interface with the first polycrystalline silicon film 13 and the second polycrystalline silicon film 16 is deposited to the extent that the silicide film 14 is not exposed leaving the resist 15. Then, anisotropic etching is carried out to leave the silicon thermal oxide film 12, the second polycrystalline silicon film 16 is left at the side of the high melting point metal silicide film 14 and the first polycrystalline silicon film 13 is etched without overchanging. This makes close adhesion of the silicide film and the polycrystalline silicon film and an excellent quality oxide film which is excellent in an oxidation resistance characteristic can be formed at the side. |
