| 摘要 |
PURPOSE:To eliminate the effect of leakage beams by applying a photodetector and an electronic device forming layer to the surface of a substrate in succession, shaping a light-receiving section electrode for the photodetector to the back and forming another electrode for the photodetector and an electronic device to the surface of the substrate. CONSTITUTION:When a substrate 5 in a PIN diode light-receiving section is removed to shape a recess 6, a layer 4 is exposed, Zn is diffused to the layer 4 so as to reach a layer 3 and a P type layer 7 is formed and the recess shaped to the back of the substrate 5 is formed in a hole having a diameter of approximately 125mum, a fiber having an outer diameter of 125mum can be inserted deeply and combined. The ions of boron, etc. are implanted to shape insulating regions 8, and a gate electrode G, a source electrode S and a drain electrode D are formed in a FET forming region. A layer 9 represents an N type side electrode for a PIN diode shaped onto a layer 1, a layer 10 and a layer 11 represent P type side electrodes for a PIN diode formed onto the Zn-diffusion P type layer 7, and the P type side electrodes and the gate electrode G for a FET are connected. Accordingly, the substrate is flattened, elements are easily isolated, and the PIN diode and the FET are formed onto the reverse surfaces, thus preventing the effect of leakage beams. |
