MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To equalize and stabilize characteristics by fixing a temperature- compensating plate on the anode side of an silicon semiconductor substrate by an alloy and thermally treating the whole in an N2 atmosphere. CONSTITUTION:A temperature-compensating plate 6 is fastened on the anode region 4 side of an silicon semiconductor substrate at approximately 730 deg.C through aluminum solder 5 as an alloy, and the whole is thermally treated for 1hr or more in an N2 atmosphere at 600-700 deg.C. When a recombination center generated on the interface between an insulating film 1 such as an silicon dioxide film on the cathode region 3 side and the surface of the silicon semicon ductor substrate is reduced by adding a heat treatment process and a cathode junction is forward-biassed, the injection efficiency of electrons to a base region 9 from a cathode region 3 is improved, and the current amplification factor of a transistor consisting of NE-PB-NB is enhanced. The lifetime of an NB layer is lengthened through the heat treatment, thus also improving characteristics.