| 摘要 |
PURPOSE:To simplify a process by directly etching silicon or an silicon nitride thin-film through electron-beam assisting etching. CONSTITUTION:XeF2202 is introduced into a reaction-gas material housing chamber 201, and a sbstrate 205, to an uppe layer thereof an Si thin-film is formed, is set to a sample base 204. An electron-beam projection system 210 and a sample chamber 208 are evacuated up to a high vacuum of approximately 10<-5> Torr or higher. A reaction gas material XeF2 exists as a solid in atmospheric air but easily sublimates by an evacuation, and passes through a piping 203, and the inside of a by-sample chamber 206 is filled with XeF2 as a reaction gas. The substrate 205, to the upper layer thereof the Si thin-film is shaped, is irradiated by electron beams focussed through a pin hole 207, and the Si thin-film at a position irradiated is etched. |
