| 摘要 |
PURPOSE:To enable a contact electrode plate common to the whole electrodes provided by division over the element surface, by a method wherein a contact electrode plate has spring property by putting a cut which forms the band section and is molded in curve to an umbrella form in the state of no pressure, and this curve is superposed on the surface of the semiconductor element. CONSTITUTION:The contact electrode plate 7 is produced by putting a spiral cut 71 in a molybdenum plate and has spring property in a helical structure made up of a slender band section 72. Because of flexibility in the band section, this plate 7 can be molded to an umbrella form which is a larger curve than that of a GTO element 10. When a clamping pressure is applied between electrodes 61, 62 after the curve is superposed on the element by fitting its direction to that of the curve of the element 10, contact starts at the periphery, and finally this plate contacts the central cathode electrode 2. For this purpose, much larger clamping pressure than repulsive force caused by the spring property of the contact electrode plate 7 is required, but this pressure is not so large as to break down an Si plate. Thereby, the plate 7 contacts all the cathodes 2, and electric currents can be flowed out of all the cathode electrodes. |
