| 摘要 |
PURPOSE:To enable the generation of a fixed or more power without unevenness in brightness, by a method wherein the area of a P-N junction is made larger by setting the distance from the width-directional center of the P-N junction to the closest other electrode within a range of required values satisfying almost uniform light emission. CONSTITUTION:The P-N junction A of a light emitting element 13 is slender, and an anode 14 and a cathode 15 are arranged in its periphery and in its lower part, respectively. The distance from the center of the width (a) of the junction A to the closest anode 14 is set within a distance enough to increase the brightness. As a method of increasing the P-N junction area with in a fixed area to increase the total power in this light emitting element, the light emitting element equipped with P-N junctions shaped as shown by B and C is possible. A light emitting element 16 is produced by arranging a plurality of P-N junctions B of the same shape as that of the junction A and is provided with a cathode 17 and an anode 18 in the lower part of each junction B and in its periphery, respectively; thus, the total power is made several times larger by a factor of pieces of junctions. |
