发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To accurately form a fine pattern by forming a sublimate material in a film such as a metal film using a focusing ion beam and by sublimating it and eliminating it by a heat treatment. CONSTITUTION:A molybdenum metal film 2 is formed on a substrate 1. A focusing ion beam 5 by oxy ion is selectively irradiated to form a pattern on a metal film 2. And then, a molybdenum oxide 6 which is a subliminate material is formed on a position exposed to the beam 5. After a heat treatment, the oxide 6 subliminates and is eliminated, and a desired pattern is finely formed.
申请公布号 JPS61133632(A) 申请公布日期 1986.06.20
申请号 JP19840256192 申请日期 1984.12.03
申请人 MITSUBISHI ELECTRIC CORP 发明人 EGUCHI KOJI
分类号 C23F4/00;H01L21/302;H01L21/3065 主分类号 C23F4/00
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