| 摘要 |
PURPOSE:To obtain a large-sized titled single crystal easily and economically without necessitating a large-sized high-pressure apparatus, by controlling the temperature of a specific assistant raw material, thereby compensating the compositional change of the molten raw material caused by the progress of the epitaxial growth in vapor phase. CONSTITUTION:A CdTe seed crystal 4 forming the nucleus of epitaxial growth is fixed to the bottom of a quartz ampule 1 facing the growth face upward. A molten raw material 5 of a three-component group II-VI compound such as Hg1-xCdxTe (x is value determined by the wavelength of the infrard ray to be detected) containing the group VI element excess to the stoichiometric value is placed on the seed crystal 4 contacting with each other at the initial stage of the crystal growth. The group II element Cd having low vapor pressure and group II element having high vapor pressure are charged in the ampule 1 in the form of a group II-VI compound Hg1-xTex 8 for replenishment. The ampule 1 is inserted in a furnace, heated with the main heater 2 and the assistant heater 3, and lowered to effect the growth of the single crystal 6 in a thermally equilibrated state shown in the Figure. The temperature of the assistant raw material of the element 7 and the compound 8 is controlled to compensate the compositional change of the molten raw material by the vapor phase having a vapor pressure corresponding to the temperature. A single crystal 6 having uniform composition can be produced thereby.
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