| 摘要 |
PURPOSE:To produce a semiconductor single crystal having high quality and low contamination with carbon and metals, stably in high reproducibility, by using a specific sintered AlN embedded with a heating element such as W, Mo, etc., as a heater of an apparatus for the production of a single crystal by LEC process, and growing a compound semiconductor single crystal with the apparatus. CONSTITUTION:A crucible 12 is placed in the pressure vessel 11 of an apparatus for the production of a compound semiconductor single crystal by LEC process. The crucible 12 is surrounded coaxially with the main heater 21 made of carbon. An assis tant heater 22 composed of closely contacting two cylinders 22a and 22b made of sintered AlN, a heating element 22c consisting of W or Mo heater, and a filler 22d made of powder of sintered AlN, is placed above the main heater 21, and is surrounded with a heat-shielding material 23. Ga 13, As 14 and B2O3 15 are charged in the crucible 12, and heated and melted with the heaters 22, 21. The seed crystal 32 is made to contact with molten GaAs 13, 14 via the molten B2O3 15 for encapsulation, and is pulled up to effect the growth of a single crystal. A GaAs single crystal having high purity can be produced in high productivity by this process.
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