METHOD AND DEVICE FOR FORMING THIN FILM

摘要

PURPOSE:To form a thin film having excellent adhesiveness and a specified compsn. ratio by constituting a titled method and device of the 1st stage for depositing a vapor deposition material by evaporation on a sample, the 2nd stage for irradiating ions of high energy to the sample, the 3rd stage for depositing the vapor deposition material by evaporation on the sample and the 4th stage for irradiating ions of low energy to the sample. CONSTITUTION:The sample 4a is cleaned by a high energy ion source 8A and a rotary holder 10 is rotated to deposit an evaporating material by evaporation from a vapor source 6 on the sample to form the thin film F1 thereon in the 1st stage. The rotary holder 10 is rotated and the ions are irradiated to the sample from the high energy ion source 8A to form a mixing layer M on the sample in the 2nd stage. The rotary holder 10 is rotated and the vapor deposition material is deposited by evaporation from the vapor source 6 on the thin film F1 to form a thin film F2 thereon in the 3rd stage. The rotary holder 10 is rotated and the ions are irradiated from the low energy ion source 8B to the sample to form the thin film F2 having the desired element compsn. in the 4th stage.