| 摘要 |
PURPOSE:To obtain a high precision and high-quality semiconductor by a method wherein an ultraviolet light source to be used for making reaction gas excite and a laser beam oscillating unit to oscillate-output a laser beam to be used for making the surface of the substrate activate are provided. CONSTITUTION:Reaction gas 4 is excited by an ultraviolet light to be projected via an incident window 6 from plural linear lamps 31 and a photochemical reaction is generated. On the other hand, a laser beam 11 having a long wave length, such as a CO2 laser beam, is irradiated on the prescribed part of the surface of a substrate 5. By this way, the surface of the substrate 5 is locally heated and is activated. Accordingly, the reaction product to be made to gener ate by the irradiation of ultraviolet light is deposited on only the prescribed part of the surface of the substrate 5 and a thin film is selectively formed on the surface. When the laser beam 11 is scanned on the surface of the sub strate 5 by a scanning unit 12 while the thin film is formed on the prescribed part of the surface of the substrate 5, the desired thin film pattern is formed on the surface of the substrate 5. |
