| 摘要 |
PURPOSE:To obtain bumps of sufficient height and good shape by facilitating the patterning of a negative resist and by preventing pattern obscurity, by a method wherein a mask not affected by swelling is formed out of metal in the periphery of a wafer. CONSTITUTION:Lead-out electrodes 12 and an SiO2 layer 13 are formed on a P type Si substrate 11, and a positive resist 14 and a negative resist 15 are applied thereon. Further, an Al 16 is evaporated thereon, and a thin positive resist 17 is applied. Next, the resist 17 is exposed by using a photo mask 18 and patterned by development, thus leaving bump-forming regions. Then, the Al 16 is etched by using the remaining resist 17 as the mask, and is hardened by whole exposure. Further, the development of the resist 17, etching of the Al 16, and development of the resist 15 are carried out, and holes 19 are formed by removing the unexposed parts 15'. Moreover, holes 20 are formed by removing the resist 14 with a remover, and In is evaporated to the electrodes 12 and lifted off into bumps 21. |
