发明名称 |
Resistor structure for transistor having polysilicon base contacts |
摘要 |
Disclosed is a dumbbell-shaped resistor structure fabricated in a semiconductor substrate for determining the resistivity of the intrinsic base of a polysilicon base transistor. The structure includes an n-doped base region having two large parts separated by a narrow part, resembling a flattened dumbbell, each of which extends into the substrate. A p-type emitter region extends a distance into a portion of the narrow and the second large parts of the base region. An n-type reach-through region extends from the emitter region through the base region electrically isolating a portion of the narrow and second large parts of the base region from the remainder of the base region and forming an electrically continuous p-type path between the first large part of the base region and the portion of the second large part within the reach-through region.
|
申请公布号 |
US4595944(A) |
申请公布日期 |
1986.06.17 |
申请号 |
US19830566597 |
申请日期 |
1983.12.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANTIPOV, IGOR |
分类号 |
H01L27/04;H01L21/285;H01L21/331;H01L21/822;H01L29/10;H01L29/73;H01L29/732;H01L29/8605;(IPC1-7):H01L27/02;H01L29/06 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|