Non-volatile random access memory cell with CMOS transistors having a common floating grid

摘要

The invention relates to a non-volatile static memory cell. The cell comprises a bistable flip-flop with four transistors, with two complementary outputs. Between the outputs is placed a non-volatile storage element comprising two complementary transistors in series, namely a p channel transistor and a n channel transistor, said transistors having a common floating grid and a common control grid. A charge injection zone is provided on the side of the source region on the n channel transistor. The region is connected to an output of the flip-flop, while the control grid is connected to the other output. Repositioning takes place without any reversal of the original state of the flip-flop.