发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PURPOSE:To form efficiently a thin film with a uniform film thickness on a large area substrate, by arraying in parallel a plural of arc line shaped lamps which are positioned higher as nearer the center, in the direction of the reaction chamber axis, with upward convex formed perpendicular to the reaction chamber axis. CONSTITUTION:Reaction gas 7 introduced into a quartz glass tube 1 is excited and decomposed by irradiating light from a light source 12, and the resulted products are deposited on a substrate 4 to form a thin film thereon. In this case, the light is irradiated from a plural of line shaped lamps 12a arrayed in parallel and axially of the tube 1 with the height from the substrate 4 being higher as nearer the center, so that longitudinal illumination on the substrate 4 can be uniformed wholly at the both ends and center. Since each lamp 12a has an upward convex arc shape perpendicular to the glass tube axis,f the both ends of the lamp 12a which have a smaller light quantity are nearer to the substrate 4. Thus the smaller light quantity can be compensated with the nearer distance, so that illumination perpendicular to the tube axis on the substrate 4 can be uniformed. As the result, on the entire surface of the substrate 4, a thin film with an uniform film thickness can be formed.
申请公布号 JPS61129821(A) 申请公布日期 1986.06.17
申请号 JP19840251076 申请日期 1984.11.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBAYASHI TOSHIYUKI;OTOMO YOSHIMI;KINOSHITA NORIYOSHI;ODA MASAO
分类号 H01L21/205;H01L21/263;H01L21/31 主分类号 H01L21/205
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