DRY ETCHING METHOD OF ALUMINUM-SILICON-COPPER ALLOY

摘要

PURPOSE:To prevent the generation of etching residue on the surface of an etching substrate by using a gas in which at least one or both of nitrogen and argon are mixed with a chlorine group reaction gas. CONSTITUTION:A dry etching method through which 10vol%-50vol% nitrogen or 10vol%-50vol% argon or a mixed gas of both nitrogen and argon as gases generating sputtering action in which a copper component is not left to a chlorine group reaction gas is mixed by 10vol%-50vol% is employed. Nitrogen or argon or the mixed gas of both nitrogen and argon nis mixed with the single gas or mixed gas of the chlorine group reaction gas by 10vol%-50vol%, thus allowing the processing of an aluminum-silicon-copper alloy without leaving the copper component.